IRF820

lang_0872 :

Harris Corporation

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Drain to Source Voltage (Vdss) :

500 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

315 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

80W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V

Supplier Device Package :

TO-220AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA