TPN3300ANH,LQ

lang_0872 :

Toshiba Electronic Devices and Storage Corporation

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9.4A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

880 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerVDFN

Power Dissipation (Max) :

700mW (Ta), 27W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

33mOhm @ 4.7A, 10V

Supplier Device Package :

8-TSON Advance (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 100µA