PMN100EPAX

lang_0872 :

Nexperia

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.5A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

616 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

SC-74, SOT-457

Power Dissipation (Max) :

660mW (Ta), 7.5W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

130mOhm @ 2.5A, 10V

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.2V @ 250µA