BSS806NH6327XTSA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.3A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 2.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.7 nC @ 2.5 V

Input Capacitance (Ciss) (Max) @ Vds :

529 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

500mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

57mOhm @ 2.3A, 2.5V

Supplier Device Package :

PG-SOT23

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

750mV @ 11µA