APTM100A23SCTG
- Производитель-деталь №
- APTM100A23SCTG
- Производитель
- Microsemi
- Упаковка/футляр
- -
- Техническое описание
- APTM100A23SCTG
- Описание
- MOSFET 2N-CH 1000V 36A SP4
- lang_0071
- 35000
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- Комментарий:
- lang_0872 :
- Microsemi
- Категория товара :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 36A
- Drain to Source Voltage (Vdss) :
- 1000V (1kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 308nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8700pF @ 25V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- SP4
- Power - Max :
- 694W
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 270mOhm @ 18A, 10V
- Supplier Device Package :
- SP4
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- lang_0258
- APTM100A23SCTG
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
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|---|---|---|---|
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| APTM100A18FTG | Microchip Technology | 35,000 | MOSFET 2N-CH 1000V 43A SP4 |
| APTM100A23STG | Microchip Technology | 35,000 | MOSFET 2N-CH 1000V 36A SP4 |
| APTM100A40FT1G | Microsemi | 35,000 | MOSFET 2N-CH 1000V 21A SP1 |
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| APTM100DA18T1G | Microsemi | 35,000 | MOSFET N-CH 1000V 40A SP1 |
| APTM100DA18TG | Microchip Technology | 35,000 | MOSFET N-CH 1000V 43A SP4 |
