FDS8333C

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

4.1A, 3.4A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

282pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

900mW

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

80mOhm @ 4.1A, 10V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

3V @ 250µA