CXT-PLA3SA12450AA

lang_0872 :

CISSOID

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

450A

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

6 N-Channel (3-Phase Bridge)

Gate Charge (Qg) (Max) @ Vgs :

295nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

30000pF @ 600V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

Module

Power - Max :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

3.25mOhm @ 300A

Supplier Device Package :

Module

Vgs(th) (Max) @ Id :

-