RM6602

lang_0872 :

Rectron USA

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

3.5A (Ta), 2.7A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 15V, 199pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power - Max :

1.2W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

58mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V

Supplier Device Package :

TSOT-23-6

Vgs(th) (Max) @ Id :

2.2V @ 250µA, 2.5V @ 250µA