RM2520ES6

lang_0872 :

Rectron USA

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

1.1A (Ta), 800mA (Ta)

Drain to Source Voltage (Vdss) :

25V, 20V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.8pC @ 4.5V, 0.6pC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

87pF @ 10V, 30pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6

Power - Max :

800mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 500mA, 4.5V, 600mOhm @ 500mA, 4.5V

Supplier Device Package :

SOT-23-6

Vgs(th) (Max) @ Id :

1V @ 250µA, 1.1V @ 250µA