BSC112N06LDATMA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4020pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerVDFN

Power - Max :

65W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

11.2mOhm @ 17A, 10V

Supplier Device Package :

PG-TDSON-8-4

Vgs(th) (Max) @ Id :

2.2V @ 28µA