HP4936DYT

lang_0872 :

Harris Corporation

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

5.8A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

2W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

37mOhm @ 5.8A, 10V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

1V @ 250µA