FF3MR12KM1HOSA1

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Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

375A (Tc)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Standard

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

1000nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

29800pF @ 25V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Power - Max :

-

Product Status :

Last Time Buy

Rds On (Max) @ Id, Vgs :

2.83mOhm @ 375A, 15V

Supplier Device Package :

AG-62MM

Vgs(th) (Max) @ Id :

5.15V @ 168mA