PMCXB900UEZ

lang_0872 :

Nexperia

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

600mA, 500mA

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel Complementary

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

21.3pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-XFDFN Exposed Pad

Power - Max :

265mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

620mOhm @ 600mA, 4.5V

Supplier Device Package :

DFN1010B-6

Vgs(th) (Max) @ Id :

950mV @ 250µA