BSD840NH6327XTSA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

880mA

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

0.26nC @ 2.5V

Input Capacitance (Ciss) (Max) @ Vds :

78pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-VSSOP, SC-88, SOT-363

Power - Max :

500mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

400mOhm @ 880mA, 2.5V

Supplier Device Package :

PG-SOT363-PO

Vgs(th) (Max) @ Id :

750mV @ 1.6µA