PDTD113EK,115

Производитель-деталь №
PDTD113EK,115
Производитель
NXP Semiconductors
Упаковка/футляр
-
Техническое описание
PDTD113EK,115
Описание
TRANS PREBIAS NPN 250MW SMT3
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35000

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NXP Semiconductors
Категория товара :
Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max) :
500 mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
33 @ 50mA, 5V
Frequency - Transition :
-
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power - Max :
250 mW
Product Status :
Obsolete
Resistor - Base (R1) :
1 kOhms
Resistor - Emitter Base (R2) :
1 kOhms
Supplier Device Package :
SMT3; MPAK
Transistor Type :
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
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PDTD113EK,115

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