PDTB123ES,126

lang_0872 :

NXP Semiconductors

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 50mA, 5V

Frequency - Transition :

-

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

500 mW

Product Status :

Obsolete

Resistor - Base (R1) :

2.2 kOhms

Resistor - Emitter Base (R2) :

2.2 kOhms

Supplier Device Package :

TO-92-3

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50 V