NSB9435T1

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

3 A

Current - Collector Cutoff (Max) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

125 @ 800mA, 1V

Frequency - Transition :

110 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

Power - Max :

3 W

Product Status :

Obsolete

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

-

Supplier Device Package :

SOT-223 (TO-261)

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

210mV @ 20mA, 800mA

Voltage - Collector Emitter Breakdown (Max) :

30 V