EML17T2R

lang_0872 :

ROHM Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

30 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA, 5V

Frequency - Transition :

250 MHz

Mounting Type :

Surface Mount

Package / Case :

6-SMD (5 Leads), Flat Lead

Power - Max :

120 mW

Product Status :

Active

Resistor - Base (R1) :

47 kOhms

Resistor - Emitter Base (R2) :

47 kOhms

Supplier Device Package :

EMT5

Transistor Type :

PNP - Pre-Biased + Diode

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V