TDTA114Y,LM
- Производитель-деталь №
- TDTA114Y,LM
- Производитель
- Toshiba Electronic Devices and Storage Corporation
- Упаковка/футляр
- -
- Техническое описание
- TDTA114Y,LM
- Описание
- TRANS PREBIAS PNP 50V 0.1A SOT23
- lang_0071
- 35000
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- Toshiba Electronic Devices and Storage Corporation
- Категория товара :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 90 @ 5mA, 5V
- Frequency - Transition :
- 250 MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 320 mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 10 kOhms
- Resistor - Emitter Base (R2) :
- 10 kOhms
- Supplier Device Package :
- SOT-23-3
- Transistor Type :
- PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500µA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- lang_0258
- TDTA114Y,LM
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
| Деталь | Производитель | Склад | Описание |
|---|---|---|---|
| TDTA114E,LM | Toshiba Electronic Devices and Storage Corporation | 35,000 | PB-F BIAS RESISTOR BUILT-IN TRAN |
| TDTA123J,LM | Toshiba Electronic Devices and Storage Corporation | 35,000 | PB-F BIAS RESISTOR BUILT-IN TRAN |
| TDTA124E,LM | Toshiba Electronic Devices and Storage Corporation | 35,000 | PB-F BIAS RESISTOR BUILT-IN TRAN |
| TDTA143E,LM | Toshiba Electronic Devices and Storage Corporation | 35,000 | PB-F BIAS RESISTOR BUILT-IN TRAN |
| TDTA143Z,LM | Toshiba Electronic Devices and Storage Corporation | 35,000 | PB-F BIAS RESISTOR BUILT-IN TRAN |
| TDTA144E,LM | Toshiba Electronic Devices and Storage Corporation | 35,000 | PB-F BIAS RESISTOR BUILT-IN TRAN |
