RN1423TE85LF

Производитель-деталь №
RN1423TE85LF
Производитель
Toshiba Electronic Devices and Storage Corporation
Упаковка/футляр
-
Техническое описание
RN1423TE85LF
Описание
TRANS PREBIAS NPN 50V 0.8A SMINI
lang_0071
3000

Запросить предложение (ЗКП)

* lang_0862:
  Компания:
* Электронная почта:
  Телефон:
  Комментарий:
lang_0872 :
Toshiba Electronic Devices and Storage Corporation
Категория товара :
Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max) :
800 mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 100mA, 1V
Frequency - Transition :
300 MHz
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power - Max :
200 mW
Product Status :
Active
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
4.7 kOhms
Supplier Device Package :
S-Mini
Transistor Type :
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
250mV @ 1mA, 50mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
lang_0258
RN1423TE85LF

Продукты, связанные с производителем

  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 3.6VWM 15VC CST2
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 3.6VWM 24VC SL2
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 3.5VWM SOD923
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 5VWM 9VC SOD923
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 12VWM SOD923

Продукты, связанные с каталогом

Сопутствующие товары

Деталь Производитель Склад Описание
RN1401,LF Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1401,LXHF Toshiba Electronic Devices and Storage Corporation 35,000 AUTO AEC-Q SINGLE NPN Q1BSR=4.7K
RN1402,LF Toshiba Electronic Devices and Storage Corporation 15,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1402,LXHF Toshiba Electronic Devices and Storage Corporation 47 AUTO AEC-Q SINGLE NPN Q1BSR=10K,
RN1402S,LF Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1403,LF Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1403,LXHF Toshiba Electronic Devices and Storage Corporation 35,000 AUTO AEC-Q SINGLE NPN Q1BSR=22K,
RN1404,LF Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1404,LXHF Toshiba Electronic Devices and Storage Corporation 35,000 AUTO AEC-Q SINGLE NPN Q1BSR=47K,
RN1404S,LF Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1405,LF Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1405,LXHF Toshiba Electronic Devices and Storage Corporation 35,000 AUTO AEC-Q SINGLE NPN Q1BSR=2.2K
RN1406,LF Toshiba Electronic Devices and Storage Corporation 14 TRANS PREBIAS NPN 50V 0.1A SMINI
RN1406,LXHF Toshiba Electronic Devices and Storage Corporation 35,000 AUTO AEC-Q SINGLE NPN Q1BSR=4.7K
RN1406S,LF(D Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS NPN 50V 0.1A SMINI