DTDG23YPT100

lang_0872 :

ROHM Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 500mA, 2V

Frequency - Transition :

80 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-243AA

Power - Max :

1.5 W

Product Status :

Active

Resistor - Base (R1) :

2.2 kOhms

Resistor - Emitter Base (R2) :

22 kOhms

Supplier Device Package :

MPT3

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

60 V