CE2F3P-T-AZ

lang_0872 :

Renesas Electronics Corporation

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 1A, 5V

Frequency - Transition :

-

Mounting Type :

Through Hole

Package / Case :

3-SSIP

Power - Max :

1 W

Product Status :

Obsolete

Resistor - Base (R1) :

2.2 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Supplier Device Package :

-

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

-

Voltage - Collector Emitter Breakdown (Max) :

60 V