JANTXV2N3960UB

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

-

Current - Collector Cutoff (Max) :

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA, 1V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

3-SMD, No Lead

Power - Max :

400 mW

Product Status :

Active

Supplier Device Package :

UB

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

300mV @ 3mA, 30mA

Voltage - Collector Emitter Breakdown (Max) :

12 V