- lang_0872 :
- Microsemi
- Категория товара :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 200 mA
- Current - Collector Cutoff (Max) :
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA, 1V
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- 3-SMD, No Lead
- Power - Max :
- 360 mW
- Product Status :
- Obsolete
- Supplier Device Package :
- UB
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- lang_0258
- 2N3251AUB
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
| Деталь | Производитель | Склад | Описание |
|---|---|---|---|
| 2N3250 PBFREE | Central Semiconductor | 1,413 | TRANS PNP 40V 0.2A TO18 |
| 2N3250A | Microchip Technology | 35,000 | TRANS PNP 60V 0.2A TO39 |
| 2N3250AUB | Microchip Technology | 35,000 | SMALL-SIGNAL BJT |
| 2N3251A | onsemi | 35,000 | DIE TRANS PNP SMALL SIGNAL 60V |
| 2N3251A | Microsemi | 35,000 | TRANS PNP 60V 0.2A TO39 |
| 2N3253 TIN/LEAD | Central Semiconductor | 35,000 | TRANS NPN 75V TO39 |
| 2N327A | Microchip Technology | 35,000 | NPN POWER SILICON TRANSISTORS |
| 2N328A | Microchip Technology | 35,000 | NPN POWER SILICON TRANSISTORS |
| 2N329A | Microchip Technology | 35,000 | NPN POWER SILICON TRANSISTORS |
