BD809G

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

10 A

Current - Collector Cutoff (Max) :

1mA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 4A, 2V

Frequency - Transition :

1.5MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Power - Max :

90 W

Product Status :

Obsolete

Supplier Device Package :

TO-220

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 300mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

80 V