FJA3835TU

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

8 A

Current - Collector Cutoff (Max) :

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 3A, 4V

Frequency - Transition :

30MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-3P-3, SC-65-3

Power - Max :

80 W

Product Status :

Obsolete

Supplier Device Package :

TO-3P

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 300mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

120 V