FPN660

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

3 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA, 2V

Frequency - Transition :

75MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Long Body

Power - Max :

1 W

Product Status :

Obsolete

Supplier Device Package :

TO-226

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

450mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

60 V