2SD20670RA

lang_0872 :

Panasonic

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

8000 @ 1A, 10V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

3-SIP

Power - Max :

1 W

Product Status :

Obsolete

Supplier Device Package :

MT-2-A1

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

100 V