PHE13003A,412

lang_0872 :

NXP Semiconductors

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

1mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 400mA, 5V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Power - Max :

2.1 W

Product Status :

Active

Supplier Device Package :

TO-92-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 250mA, 750mA

Voltage - Collector Emitter Breakdown (Max) :

400 V