2N6301E3

lang_0872 :

Microchip Technology

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

500 µA

Current - Collector Cutoff (Max) :

500µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 4A, 3V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 200°C (TJ)

Package / Case :

TO-213AA, TO-66-2

Power - Max :

75 W

Product Status :

Active

Supplier Device Package :

TO-66 (TO-213AA)

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

3V @ 80mA, 8A

Voltage - Collector Emitter Breakdown (Max) :

80 V