US6T6TR

lang_0872 :

ROHM Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA, 2V

Frequency - Transition :

360MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-SMD, Flat Leads

Power - Max :

1 W

Product Status :

Active

Supplier Device Package :

TUMT6

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

180mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

30 V