BSP52E6327HTSA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

10µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA, 10V

Frequency - Transition :

200MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power - Max :

1.5 W

Product Status :

Active

Supplier Device Package :

PG-SOT223-4

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

80 V