2N6724-18 TIN/LEAD

lang_0872 :

Central Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

25000 @ 200mA, 5V

Frequency - Transition :

1GHz

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-237AA

Power - Max :

2 W

Product Status :

Active

Supplier Device Package :

TO-237

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 2mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

40 V