PN3638A

lang_0872 :

NTE Electronics, Inc.

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

800 mA

Current - Collector Cutoff (Max) :

35nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 300mA, 2V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Power - Max :

625 mW

Product Status :

Active

Supplier Device Package :

TO-92-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1V @ 30mA, 300mA

Voltage - Collector Emitter Breakdown (Max) :

25 V