SS8050

lang_0872 :

MDD

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1.5 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA, 1V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

300 mW

Product Status :

Active

Supplier Device Package :

SOT-23

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 80mA, 800mA

Voltage - Collector Emitter Breakdown (Max) :

25 V