2N5306 TIN/LEAD

lang_0872 :

Central Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

300 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

7000 @ 2mA, 5V

Frequency - Transition :

60MHz

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Power - Max :

625 mW

Product Status :

Active

Supplier Device Package :

TO-92-3

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.4V @ 200µA, 200mA

Voltage - Collector Emitter Breakdown (Max) :

25 V