NJD35N04T4G

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

4 A

Current - Collector Cutoff (Max) :

50µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 2A, 2V

Frequency - Transition :

90MHz

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max :

45 W

Product Status :

Active

Supplier Device Package :

DPAK

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 20mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

350 V