MJD3055T4G

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

10 A

Current - Collector Cutoff (Max) :

50µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A, 4V

Frequency - Transition :

2MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max :

1.75 W

Product Status :

Active

Supplier Device Package :

DPAK

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Voltage - Collector Emitter Breakdown (Max) :

60 V