PN3563_D26Z

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA, 10V

Frequency - Transition :

1.5GHz

Gain :

14dB ~ 26dB

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

350mW

Product Status :

Obsolete

Supplier Device Package :

TO-92-3

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V