UPA806T-T1-A

lang_0872 :

Renesas Electronics Corporation

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 10mA, 3V

Frequency - Transition :

12GHz

Gain :

8.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.5dB @ 2GHz

Operating Temperature :

150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

200mW

Product Status :

Last Time Buy

Supplier Device Package :

6-SuperMiniMold

Transistor Type :

2 NPN (Dual)

Voltage - Collector Emitter Breakdown (Max) :

6V