NTE160

lang_0872 :

NTE Electronics, Inc.

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 2mA, 10V

Frequency - Transition :

700MHz

Gain :

14dB

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

5dB @ 800MHz

Operating Temperature :

90°C (TJ)

Package / Case :

TO-206AF, TO-72-4 Metal Can

Power - Max :

60mW

Product Status :

Active

Supplier Device Package :

TO-72

Transistor Type :

PNP

Voltage - Collector Emitter Breakdown (Max) :

20V