NTE395

lang_0872 :

NTE Electronics, Inc.

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10mA, 10V

Frequency - Transition :

2.3GHz

Gain :

16dB

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

2.5dB ~ 4dB @ 200MHz ~ 800MHz

Operating Temperature :

200°C (TJ)

Package / Case :

TO-206AF, TO-72-4 Metal Can

Power - Max :

225mW

Product Status :

Active

Supplier Device Package :

TO-72

Transistor Type :

PNP

Voltage - Collector Emitter Breakdown (Max) :

25V