BFR843EL3E6327XTSA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

55mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Frequency - Transition :

-

Gain :

25.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

150°C (TJ)

Package / Case :

3-XFDFN

Power - Max :

125mW

Product Status :

Active

Supplier Device Package :

PG-TSLP-3-10

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

2.6V