PEMH10115

lang_0872 :

NXP Semiconductors

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA, 5V

Frequency - Transition :

230MHz

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Power - Max :

300mW

Product Status :

Active

Resistor - Base (R1) :

2.2kOhms

Resistor - Emitter Base (R2) :

47kOhms

Supplier Device Package :

SOT-666

Transistor Type :

2 NPN - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50V