RN1705JE(TE85L,F)

lang_0872 :

Toshiba Electronic Devices and Storage Corporation

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA, 5V

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Package / Case :

SOT-553

Power - Max :

100mW

Product Status :

Active

Resistor - Base (R1) :

2.2kOhms

Resistor - Emitter Base (R2) :

47kOhms

Supplier Device Package :

ESV

Transistor Type :

2 NPN - Pre-Biased (Dual) (Emitter Coupled)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50V