RN2605(TE85L,F)
- Производитель-деталь №
- RN2605(TE85L,F)
- Производитель
- Toshiba Electronic Devices and Storage Corporation
- Упаковка/футляр
- -
- Техническое описание
- RN2605(TE85L,F)
- Описание
- TRANS 2PNP PREBIAS 0.3W SM6
- lang_0071
- 2961
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- Toshiba Electronic Devices and Storage Corporation
- Категория товара :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA, 5V
- Frequency - Transition :
- 200MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-74, SOT-457
- Power - Max :
- 300mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 2.2kOhms
- Resistor - Emitter Base (R2) :
- 47kOhms
- Supplier Device Package :
- SM6
- Transistor Type :
- 2 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- lang_0258
- RN2605(TE85L,F)
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
Деталь | Производитель | Склад | Описание |
---|---|---|---|
RN2601(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 253 | TRANS 2PNP PREBIAS 0.3W SM6 |
RN2602(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 35,000 | TRANS 2PNP PREBIAS 0.3W SM6 |
RN2603(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 2,215 | TRANS 2PNP PREBIAS 0.3W SM6 |
RN2604(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 35,000 | TRANS 2PNP PREBIAS 0.3W SM6 |
RN2606(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 1,030 | TRANS 2PNP PREBIAS 0.3W SM6 |
RN2607(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 4 | TRANS 2PNP PREBIAS 0.3W SM6 |
RN2608(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 35,000 | TRANS 2PNP PREBIAS 0.3W SM6 |
RN2610(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 2,945 | TRANS 2PNP PREBIAS 0.3W SM6 |
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