EMX4T2R

lang_0872 :

ROHM Semiconductor

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

50mA

Current - Collector Cutoff (Max) :

500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 10mA, 10V

Frequency - Transition :

1.5GHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

150mW

Product Status :

Active

Supplier Device Package :

EMT6

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 4mA, 20mA

Voltage - Collector Emitter Breakdown (Max) :

20V