MQ1N5553US

Производитель-деталь №
MQ1N5553US
Производитель
Microchip Technology
Упаковка/футляр
-
Техническое описание
MQ1N5553US
Описание
STD RECTIFIER
lang_0071
35000

Запросить предложение (ЗКП)

* lang_0862:
  Компания:
* Электронная почта:
  Телефон:
  Комментарий:
lang_0872 :
Microchip Technology
Категория товара :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
3A
Current - Reverse Leakage @ Vr :
1 µA @ 800 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-65°C ~ 175°C
Package / Case :
SQ-MELF, B
Product Status :
Active
Reverse Recovery Time (trr) :
2 µs
Speed :
Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package :
SQ-MELF, B
Voltage - DC Reverse (Vr) (Max) :
800 V
Voltage - Forward (Vf) (Max) @ If :
1.3 V @ 9 A
lang_0258
MQ1N5553US

Продукты, связанные с производителем

Продукты, связанные с каталогом

  • ROHM Semiconductor
    DIODE SCHOTTKY 650V 10A TO263AB
  • onsemi
    DIODE GEN PURP 100V 200MA DO35
  • SMC Diode Solutions
    DIODE GEN PURP 400V 1A SMA
  • SMC Diode Solutions
    DIODE GEN PURP 1KV 1A SMA
  • Nexperia
    DIODE GP 100V 215MA TO236AB

Сопутствующие товары

Деталь Производитель Склад Описание
MQ1N8147 Microchip Technology 35,000 TVS DIODE
MQ1N8147US Microchip Technology 35,000 TVS DIODE
MQ1N8148 Microchip Technology 35,000 TVS DIODE
MQ1N8148US Microchip Technology 35,000 TVS DIODE
MQ1N8149 Microchip Technology 35,000 TVS DIODE
MQ1N8149US Microchip Technology 35,000 TVS DIODE
MQ1N8150 Microchip Technology 35,000 TVS DIODE
MQ1N8150US Microchip Technology 35,000 TVS DIODE
MQ1N8151 Microchip Technology 35,000 TVS DIODE
MQ1N8151US Microchip Technology 35,000 TVS DIODE
MQ1N8152 Microchip Technology 35,000 TVS DIODE
MQ1N8152US Microchip Technology 35,000 TVS DIODE
MQ1N8153 Microchip Technology 35,000 TVS DIODE
MQ1N8153US Microchip Technology 35,000 TVS DIODE
MQ1N8154 Microchip Technology 35,000 TVS DIODE