HS1DL R3G

Производитель-деталь №
HS1DL R3G
Производитель
Taiwan Semiconductor
Упаковка/футляр
-
Техническое описание
HS1DL R3G
Описание
DIODE GEN PURP 200V 1A SUB SMA
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35000

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lang_0872 :
Taiwan Semiconductor
Категория товара :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
20pF @ 4V, 1MHz
Current - Average Rectified (Io) :
1A
Current - Reverse Leakage @ Vr :
5 µA @ 200 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-219AB
Product Status :
Active
Reverse Recovery Time (trr) :
50 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
Sub SMA
Voltage - DC Reverse (Vr) (Max) :
200 V
Voltage - Forward (Vf) (Max) @ If :
950 mV @ 1 A
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HS1DL R3G

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Сопутствующие товары

Деталь Производитель Склад Описание
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HS1DL M2G Taiwan Semiconductor 35,000 DIODE GEN PURP 200V 1A SUB SMA
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HS1DL MQG Taiwan Semiconductor 35,000 DIODE GEN PURP 200V 1A SUB SMA
HS1DL MTG Taiwan Semiconductor 35,000 DIODE GEN PURP 200V 1A SUB SMA
HS1DL RFG Taiwan Semiconductor 35,000 DIODE GEN PURP 200V 1A SUB SMA