ES3FB

Производитель-деталь №
ES3FB
Производитель
YANGJIE
Упаковка/футляр
-
Техническое описание
ES3FB
Описание
DIODE GEN PURP 300V 3A DO214AA
lang_0071
35000

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lang_0872 :
YANGJIE
Категория товара :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
35pF @ 4V, 1MHz
Current - Average Rectified (Io) :
3A
Current - Reverse Leakage @ Vr :
5 µA @ 300 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-214AA, SMB
Product Status :
Active
Reverse Recovery Time (trr) :
35 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
DO-214AA (SMB)
Voltage - DC Reverse (Vr) (Max) :
300 V
Voltage - Forward (Vf) (Max) @ If :
1.3 V @ 3 A
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ES3FB

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Продукты, связанные с каталогом

  • ROHM Semiconductor
    DIODE SCHOTTKY 650V 10A TO263AB
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    DIODE GEN PURP 400V 1A SMA
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Сопутствующие товары

Деталь Производитель Склад Описание
ES3F Diotec Semiconductor 3,000 DIODE SFR SMC 300V 3A
ES3F Diotec Semiconductor 3,000 SF Rect, 300V, 3.00A, 25ns
ES3F Taiwan Semiconductor 35,000 DIODE GEN PURP 300V 3A DO214AB
ES3F M6 Taiwan Semiconductor 35,000 DIODE SCHOTTKY DO214AB
ES3F M6G Taiwan Semiconductor 35,000 DIODE GEN PURP 300V 3A DO214AB
ES3F R6 Taiwan Semiconductor 35,000 DIODE SCHOTTKY DO214AB
ES3F R6G Taiwan Semiconductor 35,000 DIODE SCHOTTKY DO214AB
ES3F R7 Taiwan Semiconductor 35,000 DIODE SCHOTTKY DO214AB
ES3F R7G Taiwan Semiconductor 35,000 DIODE GEN PURP 300V 3A DO214AB
ES3F V7G Taiwan Semiconductor 35,000 DIODE GEN PURP 300V 3A DO214AB
ES3F-E3/57T Vishay 35,000 DIODE GEN PURP 300V 3A DO214AB
ES3F-E3/9AT Vishay 35,000 DIODE GEN PURP 300V 3A DO214AB
ES3F-M3/57T Vishay 35,000 DIODE GEN PURP 300V 3A DO214AB
ES3F-M3/9AT Vishay 35,000 DIODE GEN PURP 300V 3A DO214AB
ES3FB Taiwan Semiconductor 35,000 DIODE GEN PURP 300V 3A DO214AA